An Over-Evasure Detection Technique for Tightening Vth Distribution for Low Voltage Operation NOR type Flash Memory

Bibliographic Information

Other Title
  • NOR型フラッシュメモリにおける過剰消去検出手法とその応用

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Description

An over-erasure detection and recovery technique for a NOR type flash memory will be proposed.The source line bias scheme in the erase sequence extends the lower limit of threshold voltage detection,because of masking unselected over-erasure bits.Using the over erase recover programming that is the bit-by-bit programming after erasure,a very tight distribution of the erased state threshold voltage has been obtained without utilizing a negative voltage.

Journal

  • Technical report of IEICE. SDM

    Technical report of IEICE. SDM 94 (407), 29-34, 1994-12-16

    The Institute of Electronics, Information and Communication Engineers

Keywords

Details 詳細情報について

  • CRID
    1572824502297597184
  • NII Article ID
    110003310324
  • NII Book ID
    AN10013254
  • Text Lang
    ja
  • Data Source
    • CiNii Articles

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