Analysis of SiO_2 Etching Characteristics in Low Pressure HF/H_2O Vapor Process

2 Citations 7 References
  • NAKANISHI Naruhiko
    Semiconductor Development Center, Semiconductor & Integrated Circuits Div., Hitachi, Ltd.
  • KOBAYASHI Nobuyoshi
    Semiconductor Development Center, Semiconductor & Integrated Circuits Div., Hitachi, Ltd.

Bibliographic Information

Other Title
  • 低圧HF/H2OベーパープロセスにおけるSiO2エッチング機構解析

Search this article

Description

Low pressure HF / H_2O vapor etching process has been developed as a cleaning method in deep-submicron devices. As compared with the conventional wet cleaning, its unstability in etching characteristics is a serious problem in the massproduction process of Si-ULSIs. To overcome the problem, the SiO_2 etching characteristics were analyzed paying a special attention to the HF / H_2O condensation on the SiO_2 surface. The etching characteristics can be divided into three regions with respect to the partial pressures of HF / H_2O: an unsaturated mono-layer, a mono-layer, and a condensed layer region. This result can be quantitatively explained by the adsorption model on SiO_2. This model is supported by the AFM analysis of the etched oxide surface.

Journal

  • Technical report of IEICE. SDM

    Technical report of IEICE. SDM 95 (497), 77-82, 1996-01-26

    The Institute of Electronics, Information and Communication Engineers

Citations (2)*help

See more

References(7)*help

See more

Keywords

Details 詳細情報について

  • CRID
    1572824502303356800
  • NII Article ID
    110003309839
  • NII Book ID
    AN10013254
  • Text Lang
    ja
  • Data Source
    • CiNii Articles

Report a problem

Back to top