A 0.65-ns, 72-kb ECL-CMOS RAM Macro for a 1-Mb SRAM
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- NAMBU Hiroaki
- the Advanced Devices Research Department, Central Research Laboratory, Hitachi, Ltd.
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- KANETANI Kazuo
- the Advanced Devices Research Department, Central Research Laboratory, Hitachi, Ltd.
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- IDEI Youji
- the Advanced Devices Research Department, Central Research Laboratory, Hitachi, Ltd.
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- MASUDA Toru
- the Advanced Devices Research Department, Central Research Laboratory, Hitachi, Ltd.
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- HIGETA Keiichi
- the Device Development Center, Hitachi, Ltd.
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- OHAYASHI Masayuki
- the Device Development Center, Hitachi, Ltd.
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- USAMI Masami
- the Device Development Center, Hitachi, Ltd.
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- YAMAGUCHI Kunihiko
- the Device Development Center, Hitachi, Ltd.
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- KIKUCHI Toshiyuki
- the Device Development Center, Hitachi, Ltd.
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- IKEDA Takahide
- the Device Development Center, Hitachi, Ltd.
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- OHHATA Kenichi
- Hitachi Device Engineering, Ltd.
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- KUSUNOKI Takeshi
- Hitachi Device Engineering, Ltd.
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- HOMMA Noriyuki
- Hosei University
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説明
An ultrahigh-speed 72-kb ECL-CMOS RAM macro for a 1-Mb SRAM with 0.65-ns address-access time, 0.80-ns write-pulse width, and 30.24-μm^2 memory cells has been developed using 0.3-μm BiCMOS technology. Two key techniques for achieving ultrahigh speed are an ECL decoder/driver circuit with a BiCMOS inverter and a write-pulse generator with a replica memory cell. These circuit techniques can reduce access time and write-pulse width of the 72-kb RAM macro to 71% and 58% of those of RAM macros with conventional circuits. In order to reduce crosstalk noise for CMOS memory-cell arrays driven at extremely high speeds, a twisted bit-line structure with a normally on MOS equalizer is proposed. These techniques are especially useful for realizing ultrahigh-speed, high-density SRAM's, which have been used as cache and control storages in mainframe computers.
収録刊行物
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- IEICE transactions on electronics
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IEICE transactions on electronics 78 (6), 739-747, 1995-06-20
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詳細情報 詳細情報について
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- CRID
- 1573105977084663040
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- NII論文ID
- 110006388704
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- NII書誌ID
- AA10826283
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- ISSN
- 09168524
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- 本文言語コード
- en
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- データソース種別
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- CiNii Articles