Growth Process of Polyhedral Oxide Precipitates in Czochralski Silicon Crystals Annealed at 1100℃

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Details 詳細情報について

  • CRID
    1573105977150726784
  • NII Article ID
    110003921551
  • NII Book ID
    AA10650595
  • Text Lang
    en
  • Data Source
    • CiNii Articles

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