Three-dimensional Masterslice Si MMICs Operating up to K-band

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Bibliographic Information

Other Title
  • K帯Siマスタスライス型3次元MMIC

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Description

This report demonstrates K-band amplifier and mixer using the 3-D Masterslice MMIC technology. The 3-D masterslice MMIC technology effectively isolates passive circuits form the low-resistivity Si substrate. The evaluations used a 0.5-μm Si bipolar transistor with an f_max of 30 GHz. The fabricated amplifier achieved again of 7 dB from 16 GHz to 18 GHz while the mixer achieves a conversion loss of 9 dB from 16.5 GHz to 23 GHz. The performance levels of these MMICs are comparable with those of the circuits employing GaAs MESFET. These results prove that the 3-D Masterslice MMIC technology is very effective in production of Si MMIC in a high frequency range such as up to the K-band.

Journal

  • Technical report of IEICE. ICD

    Technical report of IEICE. ICD 98 (244), 91-96, 1998-08-20

    The Institute of Electronics, Information and Communication Engineers

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Keywords

Details 詳細情報について

  • CRID
    1573105977275079680
  • NII Article ID
    110003317113
  • NII Book ID
    AN10013276
  • Text Lang
    ja
  • Data Source
    • CiNii Articles

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