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Tin Diffusion from Doped Oxides for Fabricating GaAs Microwave Devices : B-2: GaAs FET/LED AND DETECTOR
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- ARNOLD Norbert
- University of Duisburg, FB9, Solid State Electronics Department
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- DAEMBKES Heinrich
- University of Duisburg, FB9, Solid State Electronics Department
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- HEIME Klaus
- University of Duisburg, FB9, Solid State Electronics Department
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Journal
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- Japanese journal of applied physics. Supplement
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Japanese journal of applied physics. Supplement 19 (1), 361-364, 1980-04-30
The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1573105977278201728
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- NII Article ID
- 110003957237
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- NII Book ID
- AA10457686
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- ISSN
- 00214922
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- Text Lang
- en
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- Data Source
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- CiNii Articles
