A Low Voltage Sense-Amplifier Driver for High-Speed Gb-Scale DRAMs

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Bibliographic Information

Other Title
  • 低電圧動作におけるDRAMセンスアンプ駆動方式

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Description

We proposed a new sense-amplifier driver for low power and high-speed Gb-scale DRAMs. Our sense-amplifier was temporally isolated from the bit-line and we used overdriving with boost capacitors, to operate at a Vcc of down to 0.8V. A charge recycle technique was employed to reduce power consumption in the additional controlling circuits. SPICE simulation showed that the access time was within 3.0ns, and the additional power consumption was reduced by 30% using the charge recycle.

Journal

  • Technical report of IEICE. SDM

    Technical report of IEICE. SDM 96 (225), 1-6, 1996-08-22

    The Institute of Electronics, Information and Communication Engineers

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Details 詳細情報について

  • CRID
    1573105977279773568
  • NII Article ID
    110003309648
  • NII Book ID
    AN10013254
  • Text Lang
    ja
  • Data Source
    • CiNii Articles

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