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Low-Temperature Si Surface Cleaning by Hydrogen Beam with Electron-Cyclotron-Resonance Plasma Excitation
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- Shibata Tomohiro
- NTT Opto-electronics Laboratories
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- Nanishi Yasushi
- NTT Opto-electronics Laboratories
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- Fujimoto Masatomo
- NTT Opto-electronics Laboratories
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Description
Si surface cleaning is successfully carried out at as low as 400°C using hydrogen ECR plasma. SIMS analysis reveals no detectable accumulation of either carbon or oxygen at the grown-layer/Si interface. Hydrogen plasma cleaning is found equally effective for unbiased and positively biased Si substrates. On the other hand, helium plasma is not as effective as hydrogen plasma for cleaning. These results imply that the major mechanism involved in the plasma cleaning is chemical reaction between silicon oxide and chemically active hydrogen radicals, rather than physical bombardment by hydrogen ions.
Journal
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 29 (7), L1181-L1184, 1990
The Japan Society of Applied Physics
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Keywords
Details 詳細情報について
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- CRID
- 1573105977988260480
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- NII Article ID
- 130003402374
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- ISSN
- 00214922
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- Text Lang
- en
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- Data Source
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- CiNii Articles