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A Cu-metallized InGaP/GaAs heterojunction bipolar transistor with reliable Pd/Ge/Cu ohmic contact for power applications

DOI 9 References

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Journal

Japanese journal of applied physics

Japanese journal of applied physics 49 (2), 20215-1〜3, 2010-02

IOP Publishing

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Keywords

Details

CRID

1573387449567591552
NII Article ID

40016982481
NII Book ID

AA12295836
ISSN

00214922
DOI

10.1143/jjap.49.020215
NDL BIB ID

10572164
Web Site

http://id.ndl.go.jp/bib/10572164
Text Lang

en
Data Source
- CiNii Articles
- NDL
- Crossref

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