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Dramatic Improvement of Vfb shift and Gmmax with ultra-thin and ultra-low-leakage SiN-based SiON gate dielectrics
Journal
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- Proceedings of IEDM Tech. Digest, 2005
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Proceedings of IEDM Tech. Digest, 2005 2005
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Details 詳細情報について
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- CRID
- 1573387450195402752
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- NII Article ID
- 10018156852
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- Data Source
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- CiNii Articles