Advanced Techniques to Decrease Defect Density in Molecular Beam Epitaxial Silicon Films

Tatsumi Toru, Aizaki Naoaki, Tsuya Hideki

Advanced Techniques to Decrease Defect Density in Molecular Beam Epitaxial Silicon Films

Tatsumi Toru

Fundamental Research Laboratories, NEC Corporation
Aizaki Naoaki

Fundamental Research Laboratories, NEC Corporation
Tsuya Hideki

Fundamental Research Laboratories, NEC Corporation

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説明

Defect density dependence on various surface cleaning conditions for molecular beam epitaxial (MBE) silicon films was investigated. Defect-free films were obtained on (100) and (511) wafers, using a combination of ozone cleaning and predeposition process after the usual wet cleaning. On the (111) wafer, the defect density dependence on growth rate was examined. The two-step growth-rate procedure was effective in decreasing stacking faults on the (111) wafer. The difference in defect density between (100) and (111) wafers is also discussed.