Gas Phase Condensation Reaction and Surface Morphology of Low-k Dielectrics by the (CH_3)_4Si and Oxygen Radical Mixuture

7 References
  • ITOH Hitoshi
    Advanced Semiconductor Devices Laboeatories, Toshiba Corp.
  • NATA Akiko
    Advanced Semiconductor Devices Laboeatories, Toshiba Corp.

Bibliographic Information

Other Title
  • テトラメチルシラン/酸素ラジカルの系の気相重合反応とSiO_x堆積形状

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Description

We investigated gas phase reaction mechanism of low-k dielectric, which had a high thermal stability up to 500℃ and a low dielectric constant with a value of 2.7, using the remote plasma CVD with tetra-methyl silane(TMS)and oxygen radicals.We found that the deposition rate of dielectric had maximum value at the point lower than the injection point of oxygen radicals and that reaction mechanisms between the upper region and the lower region of the point are deferent each other.It is found that TMS begins to condense in the gas phase.

Journal

  • Technical report of IEICE. SDM

    Technical report of IEICE. SDM 98 (555), 19-26, 1999-01-22

    The Institute of Electronics, Information and Communication Engineers

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Details 詳細情報について

  • CRID
    1573668927228305280
  • NII Article ID
    110003310159
  • NII Book ID
    AN10013254
  • Text Lang
    ja
  • Data Source
    • CiNii Articles

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