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Gas Phase Condensation Reaction and Surface Morphology of Low-k Dielectrics by the (CH_3)_4Si and Oxygen Radical Mixuture
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- ITOH Hitoshi
- Advanced Semiconductor Devices Laboeatories, Toshiba Corp.
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- NATA Akiko
- Advanced Semiconductor Devices Laboeatories, Toshiba Corp.
Bibliographic Information
- Other Title
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- テトラメチルシラン/酸素ラジカルの系の気相重合反応とSiO_x堆積形状
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Description
We investigated gas phase reaction mechanism of low-k dielectric, which had a high thermal stability up to 500℃ and a low dielectric constant with a value of 2.7, using the remote plasma CVD with tetra-methyl silane(TMS)and oxygen radicals.We found that the deposition rate of dielectric had maximum value at the point lower than the injection point of oxygen radicals and that reaction mechanisms between the upper region and the lower region of the point are deferent each other.It is found that TMS begins to condense in the gas phase.
Journal
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- Technical report of IEICE. SDM
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Technical report of IEICE. SDM 98 (555), 19-26, 1999-01-22
The Institute of Electronics, Information and Communication Engineers
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Details 詳細情報について
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- CRID
- 1573668927228305280
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- NII Article ID
- 110003310159
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- NII Book ID
- AN10013254
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- Text Lang
- ja
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- Data Source
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- CiNii Articles