Enhanced Conductivity of Zinc-oxide thin-films by Ion-Implantation of Hydrogen-atoms
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Enhancement of the conductivity of zinc oxide through doping with hydrogen atoms was examined by using ion implantation of highly resistive thin films deposited by rf magnetron sputtering at room temperature. With a doping of 1 X 10(17) atoms cm-2, the conductivity after annealing at 200-degrees-C in an N2 atmosphere at 1 atm rose from the initial 1 X 10(-7) OMEGA-1 cm-1 to 5.5 X 10(2) OMEGA-1 cm-1.
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 64 (21), 2876-2878, 1994-05-23
American Institute of Physics
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詳細情報 詳細情報について
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- CRID
- 1573668927396194560
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- NII論文ID
- 120002441238
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- NII書誌ID
- AA00543431
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- ISSN
- 00036951
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- Web Site
- http://hdl.handle.net/10228/1497
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- 本文言語コード
- en
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- データソース種別
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