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Thermal decomposition of MOVPE-grown-GaN films at high temperature
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- HANAI Hisayoshi
- Department of Electronics, Nagoya University
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- MATSUSHIMA Hidetada
- Department of Electronics, Nagoya University
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- HIRAMATSU Kazumasa
- Department of Electronics, Nagoya University
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- SAWAKI Nobuhiko
- Department of Electronics, Nagoya University
Bibliographic Information
- Other Title
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- 高温下におけるGaN薄膜の熱分解過程
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Description
Thermal decomposition of MOVPE-grown-GaN films at high temperature from 800 to 1100℃ has been investigated under different ambient-gas-phase conditions of (1) H_2 and NH_3, (2) N_2 and NH_3, and (3) N_2. Remarkable thermal decomposition of GaN films occurs with increasing temperature over 900℃ in the case of no supply of N_2 (in the case of (1)). In order to reduce thermal decomposition of GaN it is important to increase partial pressure of N_2 in the ambient gas. It is also demonstrated that thermal decomposition is applied to a novel etching technique of GaN.
Journal
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- IEICE technical report. Electron devices
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IEICE technical report. Electron devices 96 (67), 1-6, 1996-05-24
The Institute of Electronics, Information and Communication Engineers
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Details 詳細情報について
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- CRID
- 1573950402123313408
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- NII Article ID
- 110003200162
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- NII Book ID
- AN10012954
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- Text Lang
- ja
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- Data Source
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- CiNii Articles
