Fabrication of AlGaAs/GaAs Double-Hetero structure LD on GaAs(lll) A Substrate
-
- Niwano Yutaka
- Department of Electrical and Computer,Nagoya Institute of Technology
-
- Egawa Takashi
- Research Center for Micro-Structure Devices,Nagoya Institute of Technology
-
- Fujita Kazuhisa
- ATR Optical and Radio Communications Research Laboratories
-
- Nitatori Kohichi
- ATR Optical and Radio Communications Research Laboratories
-
- Watanabe Toshihide
- ATR Optical and Radio Communications Research Laboratories
-
- Jimbo Takashi
- Research Center for Micro-Structure Devices,Nagoya Institute of Technology
-
- Umeno Masayoshi
- Department of Electrical and Computer,Nagoya Institute of Technology
Bibliographic Information
- Other Title
-
- GaAs(lll)A基板上AlGaAs/GaAsダブルヘテロ構造LDの作製
Search this article
Description
Amphoteric nature of Si has been reported in growth of GaAs and AlGaAs by MBE.This amphoteric characteristic of Si has been mainly used as a current confinement in fabrication of lateral GaAs p-n junction on a patterned substrate.Although the growth of AlGaAs on planar GaAs(lll)A substrate is important for device applications such as LED and laser diode,there are problems in surface morphology,heterointerface,conduction type and carrier concentration.In this study,we demonstrate 300 K DC operation of AlGaAs, GaAs double-heterostructure(DH)LED on GaAs(lll)A-5゜- misoriented substrae using only Si dopant for the first time.
Journal
-
- IEICE technical report. Electron devices
-
IEICE technical report. Electron devices 94 (47), 37-42, 1994-05-20
The Institute of Electronics, Information and Communication Engineers
- Tweet
Details 詳細情報について
-
- CRID
- 1573950402124047488
-
- NII Article ID
- 110003200791
-
- NII Book ID
- AN10012954
-
- Text Lang
- ja
-
- Data Source
-
- CiNii Articles
