Low Power and Low Voltage MOSFETs with Variable Threshold Voltage Controlled by Back-Bias
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- HIRAMOTO Toshiro
- VLSI Design and Education Center, The University of Tokyo
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- TAKAMIYA Makoto
- Institute of Industrial Science, The University of Tokyo
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説明
We have studied the characteristic trade-offs in low power and low voltage MOSFETs from the viewpoint of back-gate control and body effect factor. Previously reported MOSFET structures are classified into four categories in terms of back-gate structures. It is shown that a MOSFET with a fixed back-bias has only a limited current drive at low voltage irrespective of device structures, while current drive of a dynamic threshold MOSFET with body tied to gate is more enhanced with increasing body effect factor. We have proposed a new dynamic threshold MOSFET, electrically induced body (EIB) DTMOS, which has a very large body effect factor at low threshold voltage and high current drive at low supply voltage.
収録刊行物
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- IEICE transactions on electronics
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IEICE transactions on electronics 83 (2), 161-169, 2000-02-25
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詳細情報 詳細情報について
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- CRID
- 1573950402232651136
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- NII論文ID
- 110003211852
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- NII書誌ID
- AA10826283
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- ISSN
- 09168524
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- 本文言語コード
- en
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- データソース種別
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- CiNii Articles
