Analytical Device Model of SOI MOSFETs Including Self-Heating Effect
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- Yasuda Naoki
- Department of Electronic Engineering, Osaka University
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- Ueno Shuichi
- Department of Electronic Engineering, Osaka University
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- Taniguchi Kenji
- Department of Electronic Engineering, Osaka University
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- Hamaguchi Chihiro
- Department of Electronic Engineering, Osaka University
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- Yamaguchi Yasuo
- LSI Research and Development Laboratory, Mitsubishi Electric Corporation
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- Nishimura Tadashi
- LSI Research and Development Laboratory, Mitsubishi Electric Corporation
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説明
A simple analytical model for device characteristics of silicon-on-insulator (SOI) MOSFETs is proposed. The effect of the self-heating is incorporated into a pseudo-2-dimensional drain-current model through an analytical expression using a thermal distribution-constant circuit. The device characteristics calculated with the model were found to agree well with experimental drain-current characteristics.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 30 (12), 3677-3684, 1991
公益社団法人 応用物理学会
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詳細情報 詳細情報について
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- CRID
- 1573950402935321856
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- NII論文ID
- 130003470809
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- ISSN
- 00214922
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- 本文言語コード
- en
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- データソース種別
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- CiNii Articles