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Highly Reliable MOS Trench Gate FET by Oxygen Radical Oxidation
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- UEDA Naoki
- Process Development Laboratory, Sharp Corporation
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- SAITO Yuji
- Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
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- HIRAYAMA Masaki
- Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
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- YAMAUCHI Yoshimitsu
- Process Development Laboratory, Sharp Corporation
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- SUGAWA Shigetoshi
- Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
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- OHMI Tadahiro
- New Industry Creation Hatchery Center, Tohoku University
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Journal
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- Extended abstracts of the ... Conference on Solid State Devices and Materials
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Extended abstracts of the ... Conference on Solid State Devices and Materials 2001 164-165, 2001-09-25
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Details 詳細情報について
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- CRID
- 1574231874906455936
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- NII Article ID
- 10015752562
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- NII Book ID
- AA10777858
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- Text Lang
- en
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- Data Source
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- CiNii Articles
