CMOS Open Defect Detection by Supply Current Measurement under Time-Variable Electric Field Supply
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- HASHIZUME Masaki
- Faculty of Engineering, The University of Tokushima
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- ICHIMIYA Masahiro
- Faculty of Engineering, The University of Tokushima
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- YOTSUYANAGI Hiroyuki
- Faculty of Engineering, The University of Tokushima
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- TAMESADA Takeomi
- Faculty of Engineering, The University of Tokushima
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Description
In this paper, a new test method is proposed for detecting open defects in CMOS logic ICs. The method is based on supply current of ICs generated by supplying time-variable supply voltage and electric field from the outside of the ICs. Also, test input vectors for the test method are proposed and it is shown that they can be generated more easily than functional test methods based on stuck-at fault models. The feasibility of the test is examined by some experiments. The empirical results promise us that by using the method, open defects in CMOS ICs can be detected.
Journal
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- IEICE Trans. Inf. & Syst., D, Oct. 2002
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IEICE Trans. Inf. & Syst., D, Oct. 2002 85 (10), 1542-1550, 2002-10-01
The Institute of Electronics, Information and Communication Engineers
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Keywords
Details 詳細情報について
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- CRID
- 1574231876981112832
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- NII Article ID
- 110006376584
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- NII Book ID
- AA10826272
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- ISSN
- 09168532
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- Text Lang
- en
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- Data Source
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- CiNii Articles