A noise measurement of static induction transistor for low power communication (part3) : A measurement of low frequency noise

  • Itoh Keiichi
    Department of Electric and Electronic Engineering,Mining College, Akita University
  • Inoue Hiroshi
    Department of Electric and Electronic Engineering,Mining College, Akita University

Bibliographic Information

Other Title
  • 小電力用静電誘導トランジスタ(SIT)の雑音測定(その3) : 低周波雑音の測定

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Description

A measurement of noise in the range of 300Hz to 1MHz of static induction transistor for low power communication is reported. Results of a measurement indicate as follows:(1)Dependancy on drain current is observed in flat noise region,but not observed in 1, f noise region.(2)The larger the product of the source length by the source number,the higher crossover frequency shift.It is considered flat noise is dominantly influenced by the thermal noise in the channel,but 1/f noise might have another noise source which is little infuenced by the thermal noise in the channel.

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Details 詳細情報について

  • CRID
    1574231877096240256
  • NII Article ID
    110003190937
  • NII Book ID
    AN10013108
  • Text Lang
    ja
  • Data Source
    • CiNii Articles

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