Transient Response of Current Gain Collapse in Multi-finger HBTs

6 References
  • MATSUBAYASHI H.
    Optoelectoronic & Microwave Devices Laboratory Mitsubishi Electric Corporation
  • SHIMURA T.
    Optoelectoronic & Microwave Devices Laboratory Mitsubishi Electric Corporation
  • NAKAJIMA Y.
    Optoelectoronic & Microwave Devices Laboratory Mitsubishi Electric Corporation
  • TAKAGI T.
    Optoelectoronic & Microwave Devices Laboratory Mitsubishi Electric Corporation
  • ISHIHARA O.
    Optoelectoronic & Microwave Devices Laboratory Mitsubishi Electric Corporation

Bibliographic Information

Other Title
  • マルチフィンガHBTの過渡応答特性評価によるコラプス現象の解析

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Description

The current gain collapse phenomena in Multi-Finger HBTs were investigated with respect to collector current transient response to pulsed base bias voltage supply. The time constant of the current gain collapse was estimated from the time duration for the collapse from the pulse rise of base bias. The time constant is in inversely proportion to the collector rise-up current. And the current gain collapse cannot be raised with the shorter base bias pulse than the time constant for collapse. We made the numerical simulation of transient junction temperature rise in case of single finger HBT, and estimated the junction temperature for the collapse. As a result, the time constant for the collapse is in agreement with the time constant for the junction temperature saturation.

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Details 詳細情報について

  • CRID
    1574231877100466304
  • NII Article ID
    110003200318
  • NII Book ID
    AN10012954
  • Text Lang
    ja
  • Data Source
    • CiNii Articles

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