High Voltage Electron Beam Writing for Submicron Design Rule VLSI Fabrications : A-5: PROCESS TECHNOLOGY
-
- YOSHIMI Makoto
- Integrated Circuits Laboratory, Toshiba Research and Development Center, Toshiba Corporation
-
- TAKAHASHI Minoru
- Integrated Circuits Laboratory, Toshiba Research and Development Center, Toshiba Corporation
-
- KAWABUCHI Katsuhiro
- Integrated Circuits Laboratory, Toshiba Research and Development Center, Toshiba Corporation
-
- KATO Yoshihide
- Integrated Circuits Laboratory, Toshiba Research and Development Center, Toshiba Corporation
-
- TAKIGAWA Tadahiro
- Integrated Circuits Laboratory, Toshiba Research and Development Center, Toshiba Corporation
この論文をさがす
収録刊行物
-
- Japanese journal of applied physics. Supplement
-
Japanese journal of applied physics. Supplement 22 (1), 179-182, 1983-02-28
社団法人応用物理学会
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1574231877184190208
-
- NII論文ID
- 110003953968
-
- NII書誌ID
- AA10457686
-
- ISSN
- 00214922
-
- 本文言語コード
- en
-
- データソース種別
-
- CiNii Articles
