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A High Power MOS-FET with a Vertical Drain Electrode and Meshed Gate Structure : A-5: FIELD EFFECT TRANSISTORS (II)
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- YOSHIDA Isao
- Central Research Laboratory, Hitachi Ltd.
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- KUBO Masaharu
- Central Research Laboratory, Hitachi Ltd.
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- OCHI Shikayuki
- Central Research Laboratory, Hitachi Ltd.
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- OHMURA Yoshito
- Central Research Laboratory, Hitachi Ltd.
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Journal
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- Japanese journal of applied physics. Supplement
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Japanese journal of applied physics. Supplement 15 (1), 179-183, 1976
The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1574231877184193152
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- NII Article ID
- 110003953910
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- NII Book ID
- AA10457686
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- ISSN
- 00214922
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- Text Lang
- en
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- Data Source
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- CiNii Articles