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Preparation of Ferroelectric PbTiO<SUB>3</SUB> Thin Film by Reactive Sputtering
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- Okamura Takeshi
- Kyocera Corporation
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- Adachi Masatoshi
- Department of Electronics, Faculty of Engineering, Kyoto University
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- Shiosaki Tadashi
- Department of Electronics, Faculty of Engineering, Kyoto University
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- Kawabata Akira
- Department of Electronics, Faculty of Engineering, Kyoto University
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Description
Ferroelectric PbTiO3 thin films have been successfully obtained. The films were fabricated by reactive sputtering using a simple metal composite as a target. Without postannealing, the films with perovskite structure have been obtained at substrate temperatures of 600–620°C. The spontaneous polarization (Ps) and the coercive field (Ec) of a 0.70 μm-thick film were measured as 37 μC/cm2 and 86 kV/cm, respectively.
Journal
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 30 (4), 727-728, 1991
The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1574231877911177856
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- NII Article ID
- 130003470932
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- ISSN
- 00214922
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- Text Lang
- en
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- Data Source
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- CiNii Articles