Self-assembled growth of ordered GaAs nanostructures
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説明
<jats:p>The authors have fabricated an ordered array of GaAs nanoislands using the network of misfit dislocations at the InAs∕GaAs(111)A interface. Ga nanoislands are preferably formed at compressively strained regions between buried dislocations. GaAs nanoislands fabricated by supplying As4 flux to the Ga islands also show a high degree of ordering, while simultaneous deposition of Ga and As results in random nucleation of GaAs nanoislands.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 89 2006-08-21
AIP Publishing
