Infrared Spectra of Ultra-Thin SiO<sub>2</sub> Grown on Si Surfaces
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説明
<jats:title>ABSTRACT</jats:title><jats:p>The structure of thin SiO<jats:sub>2</jats:sub> films thermally grown on Si(100) and Si(111) surfaces has been characterized by using infrared internal reflection and x-ray photoelectron spectroscopy. It is found that the infrared absorption peak due to the LO phonon mode originating from the Si-O-Si stretching vibration shows a considerable red shift in the thickness range below 30A. This red shift is interpreted in terms of the compressive stress near the interface.</jats:p>
収録刊行物
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- MRS Proceedings
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MRS Proceedings 318 1993-01-01
Springer Science and Business Media LLC
