Properties of Aluminum Thin Films Prepared by Targets Facing Type of Sputtering System

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<jats:title>ABSTRACT</jats:title><jats:p>The Targets Facing Type of Sputtering (TFTS) system can deposit very dense films on substrates at a high rate without undesirable influences of the plasma. Using this system, Al films 0.7 ∿ 1.5 µm thick were deposited in an argon gas pressure P<jats:sub>Ar</jats:sub> of 9.7 × 10<jats:sup>−2</jats:sup> Pa.</jats:p><jats:p>The grains with irregular shape grew as P<jats:sub>Ar</jats:sub> became high. However, the number of grains per unit area decreased and their size became small when the bias voltage to the substrate Vb was -40 V. Consequently, the film surfaces became smooth. The Al films became hardest at Vb of about -40 V and were twice as hard as ones prepared without the bias voltage.</jats:p><jats:p>The step coverage of these Al films was very satisfactory to the wiring of the integrated circuit (IC) by adjusting Vb and P<jats:sub>Ar</jats:sub> at the proper values.</jats:p>

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  • MRS Proceedings

    MRS Proceedings 58 1985-01-01

    Springer Science and Business Media LLC

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