Dependence of trench charging on the velocity distribution of ions incident on a SiO/sub 2/ wafer
説明
Summary form only given, as follows. As ULSI device dimensions have been scaled down, a number of issues have been raised during plasma etching. Especially, a charging damage during plasma etching is important issue to be addressed. We focus on the charging caused by the difference of the velocity distribution between electrons and positive ions incident on a SiO/sub 2/ wafer.
収録刊行物
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- The 30th International Conference on Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts.
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The 30th International Conference on Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. 128-, 2003-12-22
IEEE
