Poly-SiGe TFTs Fabricated by Low Temperature Chemical Vapor Deposition at 450°C

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<jats:title>Abstract</jats:title><jats:p>Low temperature growth of poly-SiGe has been investigated by reactive thermal chemical vapor deposition technique, which is a newly developed technique for preparing polycrystalline materials with using redox reactions in a set of source materials, Si<jats:sub>2</jats:sub>H<jats:sub>6</jats:sub> and GeF<jats:sub>4.</jats:sub>. In order to prepare high uniformity and reproducibility of Si-rich poly-SiGe, total pressure, gas flow ratio, and residence time are optimized at 450°C of substrate temperature. Through optimizing the conditions, poly-Si<jats:sub>1−x</jats:sub>Ge<jats:sub>x</jats:sub> (x<0.04) films have been prepared in the reproducibility more than 90% and uniformity more than 88%. Bottom gate type of n-channel thin film transistors has been fabricated in various grain size of poly-Si<jats:sub>1−x</jats:sub>Ge<jats:sub>x</jats:sub> on SiO<jats:sub>2</jats:sub> (100nm)/Si substrates. 5-36 cm<jats:sup>2</jats:sup>/Vs of field effect mobility of thin film transistors (L/W = 50μm/50μm) have been achieved after hydrogenation, whose threshold voltage is around 2±0.5V, and on/off ratio is more than 10<jats:sup>4</jats:sup>.</jats:p>

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  • MRS Proceedings

    MRS Proceedings 686 2001-01-01

    Springer Science and Business Media LLC

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