Noncontact Photoconductivity Amplitude Technique to Characterize Polishing- and Slicing-Induced Residual Damage in Si Wafers

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<jats:title>ABSTRACT</jats:title><jats:p>The photoconductivity amplitude (PCA) technique with UV laser carrier excitation has been proposed to characterize surface property and subsurface damage. Combining this new technique with mechanochemical polishing has determined the depth profile of the slicing-induced residual damage. Combining SC1 cleaning with this technique allows to determine the depth profile of residual damage induced by mirror polishing. This result leads that the mirror polishing-induced damage can be removed by the SC1 cleaning.</jats:p>

Journal

  • MRS Proceedings

    MRS Proceedings 378 1995-01-01

    Springer Science and Business Media LLC

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