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Extendibility of NiPt silicide to the 22-nm node CMOS technology
Description
This paper shows ultra-low contact resistivities with standard NiPt silicide process that can reach 1times10-8 Omega-cm2 for both n+ and p+ Si by using novel test structures of small silicided contact with varied areas from 20-nm diameter to 260-nm diameter by e-beam lithography fabricated on highly doped substrate made by conventional source drain implantation. It demonstrates that NiPt silicide can fulfill CMOS technology requirements down to the ITRS 22nm node.
Journal
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- Extended Abstracts - 2008 8th International Workshop on Junction Technology (IWJT '08)
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Extended Abstracts - 2008 8th International Workshop on Junction Technology (IWJT '08) 150-153, 2008-05-01
IEEE
