Low Temperature Formation of Ultra-Thin SiO<sub>2</sub> Layers Using Direct Oxidation Method in a Catalytic Chemical Vapor Deposition System

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<jats:title>ABSTRACT</jats:title><jats:p>This paper reports a procedure for low-temperature formation of silicon dioxide (SiO<jats:sub>2</jats:sub>) using a catalytic chemical vapor deposition (Cat-CVD) system. The surface of Si(100) is oxidized at temperatures as low as 200°C and a few nm SiO<jats:sub>2</jats:sub> films are formed. Electrical and structural properties of the layers are investigated. It is found that breakdown electric field, leakage current and the density of intermediate oxidation states is comparable with thermally oxidized sample.</jats:p>

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  • MRS Proceedings

    MRS Proceedings 567 1999-01-01

    Springer Science and Business Media LLC

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