<title>Light emission from erbium-doped nanocrystalline silicon/silicon dioxide layers under strong optical excitation</title>
この論文をさがす
説明
Photoluminescence properties of Er-doped nanocrystalline Si/ Si02 structures have been investigated under strong optical excitation. The energy of optical excitation of Si nanocrystals was shown to be almost completely transferred to Er3+ ions in surrounding Si02. It was found that at high pump intensity the energy transfer process competes successfully with nonradiative Auger-recombination in Si nanocrystals. At high excitation level the population inversion of Er3+ ions was achieved and a decrease of the decay time of the photoluminescence at 1.5 μm was observed. Possible mechanisms of the shortening of the Er3+ ion lifetime are discussed.© (2005) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
収録刊行物
-
- SPIE Proceedings
-
SPIE Proceedings 5850 20-24, 2005-06-07
SPIE