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Paving the way for full-fluid IC metallization using supercritical carbon dioxide
Description
Metal thin films for IC metallization are currently deposited either from vapor (PVD/CVD) or liquid (e.g. ECD). This paper reports critical bases for full IC metallization using only supercritical carbon dioxide (scCO/sub 2/) fluids as a deposition medium. High-aspect-ratio filling capability, (111)-preferential growth, low temperature deposition possibility, important roles of solvent capability of scCO/sub 2/ including F-less solid precursor utilization, and barrier metal deposition possibility are described.
Journal
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- Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695)
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Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695) 141-143, 2004-03-22
IEEE
