High-temperature electronic devices enabled by hBN-encapsulated graphene

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説明

<jats:p>Numerous applications call for electronics capable of operation at high temperatures where conventional Si-based electrical devices fail. In this work, we show that graphene-based devices are capable of performing in an extended temperature range up to 500 °C without noticeable thermally induced degradation when encapsulated by hexagonal boron nitride (hBN). The performance of these devices near the neutrality point is dominated by thermal excitations at elevated temperatures. Non-linearity pronounced in electric field-mediated resistance of the aligned graphene/hBN allowed us to realize heterodyne signal mixing at temperatures comparable to that of the Venus atmosphere (∼460 °C).</jats:p>

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詳細情報 詳細情報について

  • CRID
    1870865117969947904
  • DOI
    10.1063/1.5088587
  • ISSN
    10773118
    00036951
  • データソース種別
    • OpenAIRE

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