Metal ion beam self-sputter deposition system

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Description

<jats:p>A metal ion beam self-sputter deposition system, which requires no gas feeding, has been developed for film preparation under ultrahigh vacuum. A copper ion beam extracted from a liquid metal ion source is focused by an asymmetric lens system to impinge on the target which is made of the same material as the ion species. Deposition could be done under a pressure of 10−5Pa and the deposition rate of 2.5 nm/min at maximum was achieved. Crystallinity, impurity incorporation, and electrical properties of the deposited copper films were evaluated by x-ray diffraction, Rutherford backscattering spectrometry, particle induced x-ray emission, and a four point probe. The film properties were dominated by the deposition rate, and no significant dependence of the primary ion energy on the film properties was observed. The films with the resistivity of as low as 2.1μΩcm could be obtained at higher deposition rate.</jats:p>

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Details 詳細情報について

  • CRID
    1870865118150821504
  • DOI
    10.1063/1.1146957
  • ISSN
    10897623
    00346748
  • Data Source
    • OpenAIRE

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