Conduction power loss in MOSFET synchronous rectifier with parallel-connected Schottky barrier diode
説明
The conduction power loss in an MOSFET synchronous rectifier with a parallel-connected Schottky barrier diode (SBD) was investigated. It was found that the parasitic inductance between the MOSFET and SBD has a large effect on the conduction power loss. This parasitic inductance creates a current that is shared by the two devices for a certain period and increases the conduction power loss. If conventional devices are used for under 1 MHz switching, the advantage of the low on-resistance MOSFET will almost be lost. To reduce the conduction loss for 10 MHz switching, the parasitic inductance must be a subnanohenley.
収録刊行物
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- IEEE Transactions on Power Electronics
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IEEE Transactions on Power Electronics 13 667-673, 1998-07-01
Institute of Electrical and Electronics Engineers (IEEE)
