Characterization of BF<inf>2</inf>, Ga and in dopants in Si for halo implantation
説明
Ion implantation with medium current implants has been applied for halo implantation. Indium (In) has been used for halo implantation for suppression of short channel effect [1]. Recently, the advantage of cryogenic ion implantation with medium current implanters has been reported [2]. They showed that the cryogenic BF2 implant improved the short channel rolloff characteristics.
収録刊行物
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- 2013 13th International Workshop on Junction Technology (IWJT)
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2013 13th International Workshop on Junction Technology (IWJT) 74-77, 2013-06-01
IEEE