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Design and measurements of test element group wafer thinned to 10 μm for 3D system in package
Description
We designed and measured test element group wafers thinned to 10 /spl mu/m for 3D system in package. The n-well p-Si diodes in 10 /spl mu/m thick wafer showed increasing of the reverse saturation current in comparison to the currents in 20 /spl mu/m, 30 /spl mu/m or 640 /spl mu/m thick wafer. While the pMOSFETs and nMOSFETs in 10 /spl mu/m thick wafer showed no degradation of mobility, sub-threshold swing and threshold voltage. Defects might be induced by mechanical stress during wafer back grinding process near wafer back side, within a few micron-meters from the wafer back surface.
Journal
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- Proceedings of the 2004 International Conference on Microelectronic Test Structures (IEEE Cat. No.04CH37516)
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Proceedings of the 2004 International Conference on Microelectronic Test Structures (IEEE Cat. No.04CH37516) 161-164, 2004-07-20
IEEE