High Performance Bottom Gate μc-Si TFT Fabricated by Microwave Plasma CVD

DOI

Search this article

Description

<jats:title>ABSTRACT</jats:title><jats:p>Deposition trend of μc-Si was investigated using microwave (2.45GHz) plasma enhanced CVD. μc-Si films with the preferential orientation of (111) and (220) were deposited and compared. Raman scattering results show that the (111) preferentially oriented film has higher crystallinity while ESR measurements result in the fact that the (220) preferentially oriented film has smaller dangling bond density. Bottom gate thin film transistors (TFT's) were fabricated using these μc-Si films as channel layer and evaluated. H<jats:sub>2</jats:sub> plasma post-treatment has been found to be effective to improve the TFT characteristics. Mobility of about 1.4cm<jats:sup>2</jats:sup>/Vsec and on/off ratio of more than 10<jats:sup>5</jats:sup> have been achieved.</jats:p>

Journal

  • MRS Proceedings

    MRS Proceedings 1066 2008-01-01

    Springer Science and Business Media LLC

Details 詳細情報について

Report a problem

Back to top