Low thermal budget elevated source/drain technology utilizing novel solid phase epitaxy and selective vapor phase etching

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A new low thermal-budget process for elevated source/drain (S/D) structure was developed utilizing novel solid phase epitaxy (SPE) followed by vapor phase selective etching. Short channel characteristics were drastically improved compared to those attainable with the conventional selective epitaxial growth process. Bridging problems, which had been regarded as unavoidable, were also cleared. This newly developed process is a potential solution for the elevated S/D structure in 0.1 /spl mu/m devices and beyond.

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