Impact of EBAS annealing on sheet resistance reduction for Al-implanted 4H-SiC(0001)
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<jats:title>Abstract</jats:title><jats:p>In this paper, we demonstrate that high temperature and short time EBAS annealing is effective to obtain low sheet resistance without surface roughening in heavily Al-implanted 4H-SiC (0001) samples (Al concentration: 1.0 × 10<jats:sup>21</jats:sup> /cm<jats:sup>3</jats:sup>, thickness: 0.3 microns, total dose: 2.6 × 10<jats:sup>16</jats:sup> /cm2). The sheet resistance and rms surface roughness of the sample annealed at 1800 °C for 0.5 min is estimated to be 4.8k ohm/sq. and 0.82 nm, respectively. Also, we discuss the advantage of EBAS annealing for the suppression of surface roughening during annealing.</jats:p>
収録刊行物
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- MRS Proceedings
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MRS Proceedings 911 2006-01-01
Springer Science and Business Media LLC