Issues and Optimization of Millisecond Anneal Process for 45 nm node and beyond

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<jats:title>Abstract</jats:title><jats:p>We have investigated MSA, namely, Laser Spike Annealing (LSA) and Flash Lamp Annealing (FLA), dopant activation technology of source/drain extension for 45 nm node, which can be substituted for spike RTA. Since it is possible to achieve a similar relation between a sheet resistance and a junction depth by using either FLA or LSA, both annealing methods are capable of providing the junction characteristics required by the ITRS target. However, we have noticed that there are three crucial issues from the viewpoints of device integration and CMOSFET performance: junction leakage current, gate leakage current and pattern dependence. In this report, we discuss these issues and indicate how to cope with them.</jats:p>

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  • MRS Proceedings

    MRS Proceedings 912 2006-01-01

    Springer Science and Business Media LLC

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