High-efficiency triggered photons using single-cavity mode coupling of single quantum dot emission
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説明
A high efficiency, triggered single photon source with applications to quantum communications is discussed. The sources is formed from an InAs-based quantum dot located in the center of a micropost cavity formed from GaAs, with top and bottom GaAs/AlAs distributive Bragg reflector pairs, and lateral processing. When pumped above band into the semiconductor host, correlation measurements show a reduction in the two-photon probability to 0.14, compared to unity for a Poisson source. The external efficiency of this structure is 0.24.
収録刊行物
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- SPIE Proceedings
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SPIE Proceedings 5248 1-, 2003-12-10
SPIE