38.3: High Selectivity Photoresist Ashing by the Addition of NH<sub>3</sub> to CF<sub>4</sub>/O<sub>2</sub> or CHF<sub>3</sub>/O<sub>2</sub>

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<jats:title>Abstract</jats:title><jats:p>A low temperature and high selectivity ashing process using CF<jats:sub>4</jats:sub>/O<jats:sub>2</jats:sub> downfiow plasma in TFT‐LCD fabrication was developed. Reaction products were formed on the underlying a‐Si:H with the addition of NH<jats:sub>3</jats:sub> gas to CF<jats:sub>4</jats:sub>/O<jats:sub>2</jats:sub>plasma. These products obstructed the etching of a‐Si:H films by F radicals, therefore the selectivity increased.</jats:p>

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Details 詳細情報について

  • CRID
    1871709543196292736
  • DOI
    10.1889/1.1834156
  • ISSN
    21680159
    0097966X
  • Data Source
    • OpenAIRE

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