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A new working principle of ferroelectric gate FET memory with an additional electrode
Description
Reported a new operating principle of ferroelectric gate FET memory. With an intermediate electrode inserted between a ferroelectric capacitor and a MIS-FET, the memory has potential to solve problems of short retention time, high operation voltage and instability performance of conventional ferroelectric gate FET memory. The memory was experimentally and theoretically investigated and was verified to be practicable.
Journal
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- 2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)
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2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) 2 513-516, 2003-06-25
IEEE
