Control of Deposition Profile and Properties of Plasma CVD Carbon Films

Masaharu Shiratani, Kunihiro Kamataki, Yenwoon Seo, Masaru Hori, Tatsuya Urakawa, Makoto Sekine, Giichiro Uchida, Kazunori Koga, Nahi Itagaki, Yuuichi Setsuhara

doi:10.3384/wcc2/136-139

Description

<jats:p>We have succeeded to deposit anisotropic and top surface deposition profile on substrates with trenches using H-assisted plasma CVD of Ar + H2 + C7H8 at a low substrate temperature of 100 oC. For the anisotropic deposition profile, carbon is deposited without being deposited on side-wall of trenches. For the top surface deposition profile, carbon is deposited at only top surface. The optical emission measurements and evaluation of deposition rate have revealed that a high flux of H atmos is the key to the deposition profile control. The mass density of the films and their Raman spectrum have shown that their structure is a-C:H.</jats:p>

Journal

Linköping Electronic Press Workshop and Conference Collection

Linköping Electronic Press Workshop and Conference Collection 2 136-139, 2013-03-04

Linköping University Electronic Press

Details 詳細情報について

CRID: 1872272492359614208

DOI: 10.3384/wcc2.136-139; 10.3384/wcc2/136-139

ISSN: 20036523

Data Source

OpenAIRE

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