Toward charging free plasma processes: phase space modeling between pulsed plasma and microtrench
説明
Local excess charging is one of the causes of damage in ULSI circuit fabrication, i.e. anomalous etching and electrical breakdown of the gate oxide. The interface between a pulsed plasma and a microstructure on a wafer is investigated by phase space modeling, with the focus on charging free processing.
収録刊行物
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- 1998 3rd International Symposium on Plasma Process-Induced Damage (Cat. No.98EX100)
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1998 3rd International Symposium on Plasma Process-Induced Damage (Cat. No.98EX100) 156-159, 2002-11-27
American Vacuum Soc
