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Microscopic Imaging of Inversion Layer Formation in Insulator/Semiconductor Structure by Scanning Capacitance Transient Microscopy
Description
Microscopic characterization of generation lifetimes in a SiO 2 /Si structure has been carried out using scanning capacitance microscopy (SCM). Generation lifetimes could be investigated by monitoring the capacitance transient due to inversion layer formation. The validity of local capacitance transient measurements by SCM was verified by comparing with the results of conventional capacitance transient measurements using a MOS capacitor. Furthermore, it was demonstrated that SCM can be used for imaging of the formation process of the inversion layer on a nanometer scale.
Journal
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- 2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)
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2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) 1-2, 2018-06-01
IEEE
