InGaAsP optical device integration on SOI platform by Ar/O<sub>2</sub>plasma assisted bonding
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説明
The hetero-integration of InGaAsP/InP on highly doped silicon micro wire structure for Si hybrid laser using the plasma assisted direct bonding has been carried out. For strong adhesion, bonding assisted pattern was used for the silicon wire to the InGaAsP/InP layers. The I-V characteristics of the highly doped silicon micro wire to InP/InGaAsP layers are measured and compared to the Si/InP bulk bonding. The improvement of the heterointegration with long time annealing was also discussed and realized the direct current injection from Si wire platforms to compound semiconductor active layer for silicon hybrid laser.
収録刊行物
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- SPIE Proceedings
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SPIE Proceedings 8616 86160X-, 2013-03-13
SPIE
